Electrical Characterization of InGaZnO-Based Thin Film Transistor fabricated by Three-mask Process
AbstractIndium Gallium Zinc Oxide (InGaZnO) has gained increasing attention as a replacement for amorphous silicon in thin-film transistors (TFTs) owing to its excellent electrical and optoelectronic properties, chemical stability, and potential for low-temperature processing. However, efforts are being made to optimize the design to improve the performance and reduce costs. In this study, a top-contact top-gate (TCTG) structure of InGaZnO TFTs was fabricated using three lithography steps. The electrical current–voltage characteristics of the device were measured and used to extract the device parameters. The result shows transistor parameters with threshold voltage of –9 V, ON-OFF ratio of in the range of 103, maximum mobility of 1.15 cm2V-1 s-1, subthreshold slope of in the range of 103 mV/dec, and maximum interface trap density of 1.53x103 (cm-2eV-1) at maximum applied voltage of 5 V.
Ahn, M. J., & Cho, W. J. (2017). High-performance a-IGZO thin-film transistor with conductive indium-tin-oxide buried layer. Journal of the Korean Physical Society, 71, 408-412. https://link.springer.com/article/10.3938/jkps.71.408
Brotherton, S. D., (1995). Polycrystalline silicon thin film transistors. Semiconductor Science and Technology, 10(721). https://doi.org/10.1088/0268-1242/10/6/001
Cao, H., & Liang, L. (2020). Tin oxide-based thin-film transistors and their circuits. In Tin Oxide Materials (pp. 441-476). Elsevier. https://doi.org/10.1016/B978-0-12-815924-8.00015-3
Dobrescu, L., Petrov, M., Dobrescu, D., & Ravariu, C. (2000, October). Threshold voltage extraction methods for MOS transistors. In 2000 International Semiconductor Conference. 23rd Edition. CAS 2000 Proceedings (Cat. No. 00TH8486) (Vol. 1, pp. 371-374). IEEE. https://doi.org/10.1109/SMICND.2000.890257
Etor, D., Dodd, L. E., Balocco C. (2022). High-Performance Atomic Layer Deposited Al2O3 Insulator Based Metal-Insulator-Metal Diode FUOYE Journal of Engineering and Technology, 7(2). https://doi.org/10.46792/fuoyejet.v7i2.815
Han, B., Park, M., Kim, K., & Lee, Y. (2022). Characterization of Flexible Amorphous Silicon Thin-Film Transistor-Based Detectors with Positive-Intrinsic-Negative Diode in Radiography. Diagnostics, 12(9), 2103. https://doi.org/10.3390/diagnostics12092103
Huo, W., Liang, H., Lu, Y., Han, Z., Zhu, R., Sui, Y., Wang T. & Mei, Z. (2021). Dual-active-layer InGaZnO high-voltage thin-film transistors. Semiconductor Science and Technology, 36(6), 065021. https://doi.org/10.1088/1361-6641/abfd17
Jiang, L., Li, J., Huang, K., Li, S., Wang, Q., Sun, Z., Mei, T, Wang, J, Zhang, L, Wang, N & Wang, X. (2017). Low-temperature and solution-processable zinc oxide transistors for transparent electronics. ACS omega, 2(12), 8990-8996. https://doi.org/10.1021/acsomega.7b01420
Lu, S., & Franklin, A. D. (2020). Printed carbon nanotube thin-film transistors: progress on printable materials and the path to applications. Nanoscale, 12(46), 23371-23390. https://doi.org/10.1039/D0NR06231F
Lyu, J. S., & Lee, K. S. N. (1993). Determination of the interface trap density in metal oxide semiconductor field-effect transistor through subthreshold slope measurement. Japanese journal of applied physics, 32(10R), https://doi.org/10.1143/JJAP.32.4393
Neamen, D. A. (2007). Microelectronics: circuit analysis and design (Vol. 43). New York: McGraw-Hill.
Pandey, M., Rashiku, M., & Bhattacharya, S. (2021). Recent progress in the development of printed electronic devices. Chemical Solution Synthesis for Materials Design and Thin Film Device Applications, 349-368. https://doi.org/10.1016/B978-0-12-819718-9.00008-X
Petti, L., Münzenrieder, N., Vogt, C., Faber, H., Büthe, L., Cantarella, G., Bottacchi, F., Anthopoulos, T. D & Tröster, G. (2016). Metal oxide semiconductor thin-film transistors for flexible electronics. Applied Physics Reviews, 3(2). https://doi.org/10.1063/1.4953034
Reese, C., Roberts, M., Ling, M. M., & Bao, Z. (2004). Organic thin film transistors. Materials today, 7(9), 20-27. https://doi.org/10.1016/S1369-7021(04)00398-0
Samanta, S., Chand, U., Xu, S., Han, K., Wu, Y., Wang, C., Kumar, A., Velluri, H., Li, Y., Fong, X., Thean, A. V.-W., and Gong, X. (2020). Low subthreshold swing and high mobility amorphous indium–gallium–zinc-oxide thin-film transistor with thin HfO2 gate dielectric and excellent uniformity. IEEE Electron Device Letters, 41(6), 856-859. https://doi.org/10.1109/LED.2020.2985787
Sze, S. M., Li, Y., & Ng, K. K. (2021). Physics of semiconductor devices. John Wiley & sons.
Woo, C. H., Ahn, C. H., Kwon, Y. H., Han, J. H., & Cho, H. K. (2012). Transparent and flexible oxide thin-film-transistors using an aluminum oxide gate insulator grown at low temperature by atomic layer deposition. Metals and Materials International, 18, 1055-1060. https://doi.org/10.1007/s12540-012-6020-5
Zhao, Y., Wang, Z., Xu, G., Cai, L., Han, T. H., Zhang, A., Wu, Q., Wang, R., Huang, T., Cheng, P., Chang, S-Y., Bao, D., Zhao, Z., Wang, M., Huang, Y., and Yang, Y. (2020). High Performance Indium‐Gallium‐Zinc Oxide Thin Film Transistor via Interface Engineering. Advanced Functional Materials, 30(34), 2003285. https://doi.org/10.1002/adfm.202003285
Zhu, Y., He, Y., Jiang, S., Zhu, L., Chen, C., & Wan, Q. (2021). Indium–gallium–zinc–oxide thin-film transistors: Materials, devices, and applications. Journal of Semiconductors, 42(3), 031101. https://doi.org/10.1088/1674-4926/42/3/031101
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